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For the Inventor, By the Inventor

Atsugi, Japan

Kazuhisa Nakashita

This inventor holds 9 USPTO granted patents. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 1990-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuhisa Nakashita. Retrieved from https://idiyas.com/inventor/kazuhisa-nakashita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 6.9

ph-index = 8

Forward Citations = 247(Granted Patents)


Location History:

  • Atsugi, JP (1990 - 1994)
  • Kanagawa, JP (1997 - 2003)

Company Filing History:

goldMedal9 out of 16,652 
 
Semiconductor Energy Laboratory Co., Ltd.
 patents

Years Active: 1990-2003

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9 patents (USPTO):Explore Patents
1. 6638800 - Laser processing apparatus and laser processing process (2003-10-28),
2. 5891764 - Laser processing apparatus and laser processing process (1999-04-06),
3. 5643801 - Laser processing method and alignment (1997-07-01),
4. 5283087 - Plasma processing method and apparatus (1994-02-01),
5. 5256483 - Plasma processing method and apparatus (1993-10-26),
6. 5079031 - Apparatus and method for forming thin films (1992-01-07),
7. 5013688 - Method of manufacturing a semiconductor using plasma processing (1991-05-07),
8. 4987004 - Plasma processing method and apparatus (1991-01-22),
9. 4971667 - Plasma processing method and apparatus (1990-11-20),

Title: Kazuhisa Nakashita: Innovator in Laser Processing Technology

Introduction

Kazuhisa Nakashita is a prominent inventor based in Atsugi, Japan. He has made significant contributions to the field of laser processing technology, holding a total of 9 patents. His work focuses on enhancing the efficiency and effectiveness of laser applications in semiconductor manufacturing.

Latest Patents

One of Nakashita's latest patents is a laser processing apparatus and process designed for laser annealing silicon films that are 2 micrometers or less in thickness. This innovative process involves irradiating a laser beam with a wavelength of 400 nanometers or less, operating in pulsed mode with a pulse width of 50 nanoseconds or more, and preferably 100 nanoseconds or more. The apparatus includes a laser generation device and a stage for mounting samples separately from the device, which helps prevent the transfer of vibrations from the stage to the laser generation device and optical system. This design allows for a stable laser beam, ultimately improving productivity in semiconductor processing.

Career Highlights

Kazuhisa Nakashita has been instrumental in advancing laser processing techniques within the semiconductor industry. His work at Semiconductor Energy Laboratory Co., Ltd. has positioned him as a key figure in the development of innovative laser technologies. His patents reflect a deep understanding of the complexities involved in laser applications and their impact on manufacturing processes.

Collaborations

Throughout his career, Nakashita has collaborated with notable colleagues, including Shinji Imatou and Shunpei Yamazaki. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of laser technology.

Conclusion

Kazuhisa Nakashita's contributions to laser processing technology have significantly impacted the semiconductor industry. His innovative patents and collaborative efforts continue to drive advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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