The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 1990
Filed:
Feb. 03, 1989
Applicant:
Inventors:
Shunpei Yamazaki, Atsugi, JP;
Mitsunori Tsuchiya, Atsugi, JP;
Atsushi Kawano, Atsugi, JP;
Shinji Imatou, Atsugi, JP;
Kazuhisa Nakashita, Atsugi, JP;
Toshiji Hamatani, Atsugi, JP;
Takashi Inushima, Atsugi, JP;
Kenji Itou, Zama, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F / ; C23C / ;
U.S. Cl.
CPC ...
20419232 ; 20419235 ; 20429834 ; 118723 ; 156345 ; 156643 ; 427 38 ; 427 39 ; 42218605 ;
Abstract
A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.