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For the Inventor, By the Inventor

Joetsu, Japan

Kazuhiro Nishikawa

This inventor holds 10 USPTO granted patents and 4 EPO patents. Top assignee: Shin-Etsu Chemical Co., Ltd.. Active years: 1995-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuhiro Nishikawa. Retrieved from https://idiyas.com/inventor/kazuhiro-nishikawa-97ez1ok0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 10

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.3

ph-index = 3

Forward Citations = 31(Granted Patents)


Location History:

  • Annaka, JP (1995)
  • Usui-gun, JP (1998)
  • Gunma-ken, JP (2003)
  • Joetsu, JP (2012 - 2024)

Company Filing History:

goldMedal10 out of 5,989 
 
Shin-Etsu Chemical Co., Ltd.
 patents

Years Active: 1995-2024

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10 patents (USPTO):Explore Patents
1. 11860529 - Substrate with multilayer reflection film for EUV mask blank, manufacturing method thereof, and EUV mask blank (2024-01-02),
2. 11835851 - Substrate with multilayer reflection film for EUV mask blank, manufacturing method thereof, and EUV mask blank (2023-12-05),
3. 9651858 - Binary photomask blank, preparation thereof, and preparation of binary photomask (2017-05-16),
4. 9164374 - Photomask making method, photomask blank and dry etching method (2015-10-20),
5. 8980503 - Binary photomask blank and binary photomask making method (2015-03-17),
6. 8841048 - Photomask blank, photomask, and making method (2014-09-23),
7. 8304146 - Photomask making method, photomask blank and dry etching method (2012-11-06),
8. 6635400 - Resist composition and patterning process (2003-10-21),
9. 5773200 - Positive resist composition suitable for lift-off technique and pattern (1998-06-30),
10. 5422221 - Resist compositions (1995-06-06),

Title: Kazuhiro Nishikawa: Innovator in EUV Technology

Introduction

Kazuhiro Nishikawa is a notable inventor based in Joetsu, Japan. With a remarkable portfolio of ten patents, he stands out in the field of advanced manufacturing technologies, particularly in the creation of substrates for extreme ultraviolet (EUV) lithography applications.

Latest Patents

Among his significant contributions, Nishikawa's latest patents include the development of a substrate with a multilayer reflection film specifically designed for EUV mask blanks. This innovation is characterized by a substrate that has a precisely engineered multilayer reflection film, which consists of a Si/Mo laminated portion along with a protection layer containing ruthenium (Ru). The structure is meticulously designed to enhance performance in EUV applications, featuring both a lower layer and an upper layer composed primarily of Ru, supplemented by additional metal or metalloid materials.

Career Highlights

Nishikawa's career encompasses extensive experience at Shin-Etsu Chemical Co., Ltd., where he has significantly contributed to research and development in the semiconductor industry. His expertise in developing materials and processes for EUV lithography plays a crucial role in advancing the capabilities of modern semiconductor manufacturing.

Collaborations

Throughout his career, Nishikawa has collaborated with esteemed colleagues, including Yukio Inazuki and Hideo Kaneko. These partnerships have fostered a dynamic exchange of ideas, leading to innovative breakthroughs that have further shaped the landscape of EUV technology.

Conclusion

Kazuhiro Nishikawa is a distinguished inventor whose work has had a profound impact on the semiconductor industry. His patents reflect a commitment to advancing EUV technology, underscoring the importance of innovative materials in modern manufacturing processes. With continued collaborations and groundbreaking research, he is poised to lead further advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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