The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Sep. 01, 2021
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Yukio Inazuki, Joetsu, JP;
Tsuneo Terasawa, Joetsu, JP;
Takuro Kosaka, Joetsu, JP;
Hideo Kaneko, Joetsu, JP;
Kazuhiro Nishikawa, Joetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 7/70033 (2013.01);
Abstract
A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion in which Si layers and Mo layers are alternately laminated, and a layer containing Si and N intervenes at one or more portions between the Si layer and the Mo layer of the Si/Mo laminated portion, and is contact with both of the Si layer and the Mo layer.