This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2007.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2007
Title: Innovations by Kaun-Lun Cheng in Semiconductor Technology.
Introduction
Kaun-Lun Cheng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods to enhance charge carrier mobility in MOSFET devices.
Latest Patents
Cheng holds a patent titled "Method for selectively forming strained etch stop layers to improve FET charge carrier mobility." This innovative method involves creating a strained channel MOSFET device that enhances charge carrier mobility. The process includes providing first and second FET devices with opposite polarities on a substrate, forming a strained layer with selected stress types, and removing a portion of the strained layer to optimize performance.
Career Highlights
Cheng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to advance semiconductor technologies. His work has been instrumental in improving the efficiency and performance of FET devices.
Collaborations
Cheng collaborates with talented colleagues, including Shui-Ming Cheng and Yu-Yuan Yao, who contribute to the innovative environment at their workplace.
Conclusion
Kaun-Lun Cheng's contributions to semiconductor technology, particularly through his patented methods, highlight his role as a key innovator in the field. His work continues to influence advancements in electronic devices and systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile