The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
May. 21, 2004
Kaun-lun Cheng, Hsinchu, TW;
Shui-ming Cheng, Hsinchu, TW;
Yu-yuan Yao, Singang Village, Changhau County, TW;
Ka-hing Fung, Hsinchu, TW;
Sun-jay Chang, Luye Township, Tai-Tung County, TW;
Kaun-Lun Cheng, Hsinchu, TW;
Shui-Ming Cheng, Hsinchu, TW;
Yu-Yuan Yao, Singang Village, Changhau County, TW;
Ka-Hing Fung, Hsinchu, TW;
Sun-Jay Chang, Luye Township, Tai-Tung County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A strained channel MOSFET device with improved charge carrier mobility and method for forming the same, the method including providing a first and second FET device having a respective first polarity and second polarity opposite the first polarity on a substrate; forming a strained layer having a stress selected from the group consisting of compressive and tensile on the first and second FET devices; and, removing a thickness portion of the strained layer over one of the first and second FET devices to improve charge carrier mobility.