Yokkaichi, Japan

Katsuyasu Shiba

This inventor holds 4 USPTO granted patents and 3 published patent applications. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation. Active years: 2006-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuyasu Shiba. Retrieved from https://idiyas.com/inventor/katsuyasu-shiba

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 25.0

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Mie-ken, JP (2007)
  • Yokkaichi, JP (2006 - 2017)

Company Filing History:


Years Active: 2006-2017

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4 patents (USPTO):Explore Patents

Title: Innovations of Katsuyasu Shiba

Introduction

Katsuyasu Shiba is a notable inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of his latest patents is for a semiconductor device and method for manufacturing the same. According to one embodiment, this semiconductor device includes a stacked body and a pillar. The stacked body consists of insulating films, electrode films, and silicon-containing films, which are stacked alternately. One of the silicon-containing films is positioned between one of the insulating films and one of the electrode films. The pillar extends within the stacked body in the stacking direction of the insulating films and electrode films. It comprises a silicon pillar and a memory film, with the silicon pillar extending in the stacking direction and the memory film located between the silicon pillar and one of the electrode films.

Another patent focuses on the method of fabricating a semiconductor device. This method includes depositing a first silicon oxide film on a silicon substrate, followed by the deposition of a silicon-containing film on the first silicon oxide film. A coating solution for silica film formation is then applied over the silicon-containing film, and heat treatment of the coating solution results in the formation of a second silicon oxide film.

Career Highlights

Katsuyasu Shiba has worked with prominent companies in the technology sector, including Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Some of his notable coworkers include Jota Fukuhara and Hiroaki Tsunoda. Their collaboration has contributed to the successful development of various semiconductor technologies.

Conclusion

Katsuyasu Shiba's contributions to semiconductor technology through his patents and collaborations highlight his importance in the field. His innovative approaches continue to influence advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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