The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Aug. 21, 2008
Applicants:
Katsuyasu Shiba, Yokkaichi, JP;
Jota Fukuhara, Yokkaichi, JP;
Inventors:
Katsuyasu Shiba, Yokkaichi, JP;
Jota Fukuhara, Yokkaichi, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device including depositing a first silicon oxide film on a silicon substrate, depositing a silicon-containing film on the first silicon oxide film, applying a coating solution for silica film formation over the silicon-containing film, and heat-treating the coating solution, thereby forming a second silicon oxide film.
Shiba, Katsuyasu. (2010). Semiconductor device and method of fabricating the same (U.S. Patent No. 7776689). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7776689
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile