For the Inventor, By the Inventor

Enter inventor name

Yokkaichi, Japan

Jota Fukuhara

USPTO Granted Patents = 4

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 17(Granted Patents)

Location History:

Mie-ken, JP (2007)
Yokkaichi, JP (2006 - 2010)
Mie, JP (2010)

Company Filing History:

4 out of 52,766

Kabushiki Kaisha Toshiba

Years Active: 2006-2010

Loading Chart...

4 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7786004 - Method of treating an exposed conductive film prior to forming a silicide (2010-08-31),

2. 7776689 - Semiconductor device and method of fabricating the same (2010-08-17),

3. 7166889 - Semiconductor memory device having a gate electrode and a method of manufacturing thereof (2007-01-23),

4. 7067380 - Semiconductor device and manufacturing method therefor (2006-06-27),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…