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Yokkaichi, Japan

Jota Fukuhara

This inventor holds 4 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2006-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jota Fukuhara. Retrieved from https://idiyas.com/inventor/jota-fukuhara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 17(Granted Patents)

Location History:

Mie-ken, JP (2007)
Yokkaichi, JP (2006 - 2010)
Mie, JP (2010)

Company Filing History:

4 out of 53,276

Kabushiki Kaisha Toshiba

Years Active: 2006-2010

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4 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7786004 - Method of treating an exposed conductive film prior to forming a silicide (2010-08-31),

2. 7776689 - Semiconductor device and method of fabricating the same (2010-08-17),

3. 7166889 - Semiconductor memory device having a gate electrode and a method of manufacturing thereof (2007-01-23),

4. 7067380 - Semiconductor device and manufacturing method therefor (2006-06-27),

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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