The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Aug. 07, 2003
Applicants:
Jota Fukuhara, Yokkaichi, JP;
Hiroaki Tsunoda, Yokkaichi, JP;
Katsuyasu Shiba, Yokkaichi, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device manufacturing method includes forming a wiring layer, and forming a first insulating film on the wiring layer under a condition that hydrogen in a plasma is 1% or less in all gas components.
Fukuhara, Jota. (2006). Semiconductor device and manufacturing method therefor (U.S. Patent No. 7067380). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7067380
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile