Mito, Japan

Katsumi Tokiguchi

This inventor holds 19 USPTO granted patents and 3 published patent applications. Top assignees: Hitachi, Ltd., Agency of Industrial Science and Technology. Active years: 1977-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsumi Tokiguchi. Retrieved from https://idiyas.com/inventor/katsumi-tokiguchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 10

Forward Citations = 340(Granted Patents)


Location History:

  • Kokubunji, JA (1977)
  • Hachioji, JP (1982 - 1983)
  • Machida, JP (1985 - 1991)
  • Hitachi, JP (1992)
  • Mito, JP (1994 - 2000)

Company Filing History:


Years Active: 1977-2000

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19 patents (USPTO):Explore Patents

Title: The Innovations of Katsumi Tokiguchi: A Pioneer in Ion Implanting Technology

Introduction: Katsumi Tokiguchi is a renowned inventor based in Mito, Japan, with a remarkable portfolio of 19 patents. His contributions primarily focus on advancements in ion implanting technology, a crucial aspect in the field of semiconductor manufacturing. Tokiguchi's innovative designs have brought significant improvements to the efficiency and reliability of ion implantation processes.

Latest Patents: Among Tokiguchi's recent patents are two notable inventions. The first, an "Ion implanting apparatus capable of preventing discharge flaw production," addresses the challenge of discharge flaws on silicon wafers during high-temperature ion implantation. By implementing an electron beam generating apparatus to control the current flowing between the silicon wafer and the supporting disk, Tokiguchi enhances the quality of the implanting process. The second patent, the "Charge-up prevention method and ion implanting apparatus," provides a solution to charge build-up during simultaneous ion beam and electron irradiation. This innovation showcases his ability to directly measure potential and control the electron supply effectively.

Career Highlights: Throughout his career, Katsumi Tokiguchi has made significant contributions while working with major organizations. He has been associated with Hitachi, Ltd., a leading company in technology innovation, and the Agency of Industrial Science and Technology, where he further honed his expertise.

Collaborations: Tokiguchi has collaborated with esteemed colleagues such as Noriyuki Sakudo and Hidemi Koike. These partnerships have fostered a creative environment leading to the development of groundbreaking technologies and solutions in ion implantation.

Conclusion: Katsumi Tokiguchi continues to be a pivotal figure in the field of semiconductor technology. With his 19 patents, he is shaping the future of ion implanting technology, addressing critical challenges and improving efficiency in semiconductor manufacturing. His innovative spirit and dedication to research solidify his status as a significant contributor to advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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