The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
May. 19, 1999
Katsumi Tokiguchi, Mito, JP;
Takayoshi Seki, Hitachi, JP;
Kensuke Amemiya, Hitachinaka, JP;
Yasuo Yamashita, Mito, JP;
Kazuo Mera, Hitachi, JP;
Isao Hashimoto, Hitachi, JP;
Keiji Arimatsu, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.