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For the Inventor, By the Inventor

Tokyo, Japan

Katsuki Hazama

This inventor holds 33 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Nippon Steel Corporation, Pegre Semiconductors LLC, Intellectual Ventures I LLC. Active years: 1996-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuki Hazama. Retrieved from https://idiyas.com/inventor/katsuki-hazama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33

% Patents Active = 78.8

Average Co-Inventor Count = 1.1

ph-index = 10

Forward Citations = 368(Granted Patents)


Location History:

  • Tokyo-to, JP (2005 - 2007)
  • Chiyoda-ku, JP (2000 - 2009)
  • Tokyo, JP (1996 - 2014)

Company Filing History:

goldMedal22 out of 3,713 
 
Nippon Steel Corporation
 patents
silverMedal7 out of 8 
 
Pegre Semiconductors LLC
 patents
bronzeMedal1 out of 225 
 
Intellectual Ventures I LLC
 patents
4. 1 out of 3 
 
Nippon Steel Corooration
 patents
5. 1 out of 1 
 
Pegre Seminconductors LLC
 patent
6. 1 out of 7,278 
 
United Microelectronics Corp.
 patents

Years Active: 1996-2014

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Areas of Expertise:
Semiconductor Memory
Transistor Structure
Data Reading Method
Memory Cells
Manufacturing Method
Field Oxide
Composite Gate
Nonvolatile Memory
Logic Rewriting
Security Protection
Multilevel Memory
Storage Medium
33 patents (USPTO):Explore Patents
1. 8707130 - Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program (2014-04-22),
2. 7577880 - Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program (2009-08-18),
3. 7452774 - Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same (2008-11-18),
4. 7444563 - Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program (2008-10-28),
5. 7439573 - Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same (2008-10-21),
6. 7312496 - Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same (2007-12-25),
7. 7159158 - System and method for reading data stored in a semiconductor device having multilevel memory cells (2007-01-02),
8. 7149940 - Device and method for reading data stored in a semiconductor device having multilevel memory cells (2006-12-12),
9. 7139895 - Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program (2006-11-21),
10. 6913973 - Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same (2005-07-05),
11. 6895543 - Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program (2005-05-17),
12. 6857099 - Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program (2005-02-15),
13. 6853581 - Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program (2005-02-08),
14. 6787844 - Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same (2004-09-07),
15. 6656781 - METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS (2003-12-02),

Title: Katsuki Hazama: Innovator in Multilevel Semiconductor Memory Technologies

Introduction

Katsuki Hazama is a prominent inventor based in Tokyo, Japan, recognized for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 33 patents, his innovations play a crucial role in advancing data storage and memory retrieval systems.

Latest Patents

Among his most recent patents, Hazama has developed a multilevel semiconductor memory along with a write/read method and a storage medium storing the associated program. This innovative semiconductor device utilizes multilevel memory cells capable of storing at least three levels of data. It employs specific voltage values to determine the state of bits within memory cells, enhancing data storage efficiency. His work on generating voltages according to the data bits stored in memory cells stands to greatly improve data retrieval processes in semiconductor devices.

Career Highlights

Throughout his career, Hazama has made substantial contributions while working for well-known companies such as Nippon Steel Corporation and Pegre Semiconductors LLC. His tenure at these organizations has allowed him to refine his skills and further innovate in the realm of semiconductor technology, leading to numerous groundbreaking patents.

Collaborations

Katsuki Hazama has had the opportunity to collaborate with notable professionals in the field, including Atsushi Kawasaki and Kohei Eguchi. These collaborations have fostered an environment for shared innovation and have contributed to the success of multiple projects centered around semiconductor memory technologies.

Conclusion

Katsuki Hazama exemplifies the spirit of innovation within the semiconductor industry. His ongoing research and development work in multilevel memory systems not only showcases his technical expertise but also highlights the importance of collaborative efforts in achieving technological advancements. With several patents to his name, Hazama continues to pave the way for future innovations in memory storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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