Austin, TX, United States of America

Katrina M Prosperi


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2013-2014

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3 patents (USPTO):Explore Patents

Title: The Innovative Mind of Katrina M. Prosperi

Introduction

Katrina M. Prosperi is an accomplished inventor based in Austin, Texas, known for her groundbreaking contributions to the field of non-volatile memory technologies. With three patents to her name, Prosperi continues to advance innovation in the semiconductor industry.

Latest Patents

Her latest patents focus on non-volatile memory (NVM) systems with imminent error prediction. One of her notable inventions incorporates a memory array and a memory controller designed to perform integrity checks on the array. The unique functionality allows the controller to detect errors, determine whether they are correctable, and implement further reading operations with adjusted voltages to predict imminent failures within the memory array. This innovative approach enhances the reliability of NVM systems and ensures data integrity under various conditions.

Career Highlights

Katrina currently works at Freescale Semiconductor, Inc., where she has made significant contributions to memory technology. Her expertise and pioneering spirit have positioned her as a leading figure in her field. Prosperi's work not only reflects her dedication to technological advancement but also her commitment to improving memory reliability.

Collaborations

Throughout her career, Prosperi has collaborated with talented colleagues, including Chen He and Richard Eguchi. These partnerships demonstrate her ability to work effectively within a team to develop innovative solutions and push the boundaries of technology further.

Conclusion

Katrina M. Prosperi exemplifies the innovative spirit that drives progress in technology. With her notable patents and collaborative efforts, she continues to be a driving force in advancing non-volatile memory systems, ensuring a brighter and more efficient future for memory technologies.

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