This inventor holds 1 USPTO granted patent. Top assignee: Beneq Oy. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Katja Väyrynen and Semiconductor Doping Innovation.
Introduction
Katja Väyrynen is an inventor based in Espoo, Finland. Her patent work includes a method for doping semiconductors, an important process in semiconductor device fabrication. She is associated with Beneq Oy.
Latest Patents
Väyrynen is credited with 1 patent, titled “Semiconductor Doping Method and an Intermediate Semiconductor Device.” The method deposits a separation layer on a substrate, followed by a mixture material source layer containing a dopant. The substrate and both layers are then annealed, enabling the dopant to diffuse from the source layer into the substrate and separation layer.
Career Highlights
Väyrynen’s patent describes a sequence of deposition and annealing steps designed to control dopant diffusion in semiconductor materials. This approach addresses the formation of doped regions and intermediate structures used in semiconductor manufacturing.
Collaborations
Väyrynen is associated with Beneq Oy. Her listed coworkers include Emma Salmi and Erik Östreng.
Conclusion
Katja Väyrynen’s patent documents a semiconductor doping method that combines layered deposition with annealing to facilitate dopant diffusion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile