The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Oct. 28, 2021
Applicant:
Beneq Oy, Espoo, FI;
Inventors:
Assignee:
BENEQ OY, Espoo, FI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H10P 14/20 (2026.01); H10P 14/60 (2026.01);
U.S. Cl.
CPC ...
H10P 14/3441 (2026.01); C23C 16/402 (2013.01); C23C 16/45529 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H10P 14/6339 (2026.01);
Abstract
The method for doping a semiconductor includes the following steps in the following order: separation layer deposition step, in which a separation layer is deposited on the surface of a substrate, a mixture material source layer deposition step, in which a mixture material source layer including a mixture material is deposited on the separation layer, the mixture material of the mixture material source layer including a dopant substance, and annealing the substrate, the separation layer, and the mixture material source layer in an annealing step to arrange diffusion of dopant substance from the mixture material source layer to the substrate and to the separation layer.