This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Beneq Oy. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Emma Salmi: Semiconductor Doping Innovation.
Introduction
Emma Salmi is an inventor associated with Espoo, Finland, and Beneq Oy. Her patent work addresses semiconductor doping, a process used to modify the electrical properties of semiconductor materials.
Latest Patents
The available information identifies one patent associated with Salmi: “Semiconductor Doping Method and an Intermediate Semiconductor Device.” The invention describes depositing a separation layer on a substrate, followed by a mixture material source layer containing a dopant. The substrate and deposited layers are then annealed to promote diffusion of the dopant from the source layer into both the substrate and the separation layer. This sequence presents a method for controlling dopant introduction during semiconductor processing. Salmi is associated with 1 patent.
Career Highlights
Salmi’s listed patent reflects work on semiconductor fabrication and doping techniques. The available information connects her invention to Beneq Oy, but does not provide further details about her role or career history.
Collaborations
The listed coworkers associated with Salmi are Erik Östreng and Katja Väyrynen. Their names provide context for the professional network connected with her work, though the available information does not specify their contributions to the patent.
Conclusion
Emma Salmi’s patent describes a layered approach to semiconductor doping that uses annealing to diffuse dopant material into a substrate and separation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile