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For the Inventor, By the Inventor

Hohenkirchen, Germany

Karl-Peter Pfefferl

USPTO Granted Patents = 9

Average Co-Inventor Count = 2.7

ph-index = 6

Forward Citations = 116(Granted Patents)


Location History:

  • Höhenkirchen-Siegertsbrun, DE (2001)
  • Höhenkirchen-Siegergtsbrunn, DE (2001)
  • Hohenkirchen, DE (1999 - 2003)
  • Höhenkirchen-Siegertsbrunn, DE (2001 - 2003)

Company Filing History:

goldMedal5 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal3 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal3 out of 30,028 
 
Siemens Aktiengesellschaft
 patents
where one patent can have more than one assignee

Years Active: 1999-2003

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9 patents (USPTO):Explore Patents
1. 6654271 - Method for reading and storing binary memory cells signals and circuit arrangement (2003-11-25),
2. 6560134 - Memory configuration with a central connection area (2003-05-06),
3. 6310793 - Segmented word line architecture for dividing up a word line into a plurality of banks for cell arrays having long bit lines (2001-10-30),
4. 6295236 - Semiconductor memory of the random access type with a bus system organized in two planes (2001-09-25),
5. 6226219 - Semiconductor memory with a plurality of memory banks (2001-05-01),
6. 6078534 - Semiconductor memory having redundancy circuit (2000-06-20),
7. 5978931 - Variable domain redundancy replacement configuration for a memory device (1999-11-02),
8. 5970000 - Repairable semiconductor integrated circuit memory by selective (1999-10-19),
9. 5881003 - Method of making a memory device fault tolerant using a variable domain (1999-03-09),

Karl-Peter Pfefferl: Innovator in Memory Technology

Introduction

Karl-Peter Pfefferl, located in Hohenkirchen, Germany, is a prolific inventor with a remarkable portfolio of nine patents. His contributions in the field of memory technology have significantly advanced the efficiency and effectiveness of data storage systems.

Latest Patents

Among his latest innovations, Pfefferl has developed a "Method for Reading and Storing Binary Memory Cells Signals." This groundbreaking invention focuses on reducing the signal transit time of binary memory cell signals, thus enhancing data retrieval speeds. The method employs a sequence that includes applying signals to a bit line pair, utilizing a sense amplifier for switching, and outputting amplified signals through a main data line pair.

Another notable patent is the "Memory Configuration with a Central Connection Area." This design presents a memory structure encompassing a central connection area, which is annularly surrounded by cell arrays. The configuration boasts compact external dimensions, making it particularly beneficial for a side ratio of 2:1, while minimizing propagation time differences between peripheral circuits and memory cell arrays.

Career Highlights

Pfefferl's professional journey includes significant roles at leading technology firms, such as Infineon Technologies and International Business Machines Corporation (IBM). His expertise in electrical engineering and memory technologies has made him a sought-after innovator in the industry.

Collaborations

Throughout his career, Pfefferl has collaborated with esteemed colleagues, including Martin Brox and Toshiaki Kirihata. Their combined expertise has fostered a creative environment that has led to remarkable advancements in memory technology.

Conclusion

Karl-Peter Pfefferl continues to be a pivotal figure in the innovation landscape, with his patents reflecting a commitment to improving memory systems. His work not only serves the needs of modern technology but also paves the way for future advancements in data storage solutions.

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