Kanwal K Raina

This inventor holds 40 USPTO granted patents, primarily in Field Emission Displays. Top assignees: Micron Technology Incorporated, Texas A&M University System. Active years: 1994-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kanwal K Raina. Retrieved from https://idiyas.com/inventor/kanwal-k-raina

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40

% Patents Active = 75.0

Average Co-Inventor Count = 1.6

ph-index = 8

Forward Citations = 287(Granted Patents)

Location History:

College Station, TX (US) (1994 - 1995)
Boise, ID (US) (1999 - 2007)

Company Filing History:

36 out of 39,222

Micron Technology Incorporated

patents

4 out of 1,328

Texas A&M University System

patents

Years Active: 1994-2007

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Areas of Expertise:

Field Emission Display

Aluminum Films

Silicon Doping

Electron Emission

Microcrystalline Silicon

Sputter Deposition

Resistor Formation

Cathode Assembly

Surface Modification

Hillock Suppression

Thin Films

Microelectronic Assemblies

40 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7268481 - Field emission display with smooth aluminum film (2007-09-11),

2. 7239075 - Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate (2007-07-03),

3. 7161211 - Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition (2007-01-09),

4. 7101586 - Method to increase the emission current in FED displays through the surface modification of the emitters (2006-09-05),

5. 7097526 - Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate (2006-08-29),

6. 7088037 - Field emission display device (2006-08-08),

7. 7052923 - Field emission display with smooth aluminum film (2006-05-30),

8. 6911766 - Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate (2005-06-28),

9. 6893905 - Method of forming substantially hillock-free aluminum-containing components (2005-05-17),

10. 6838815 - Field emission display with smooth aluminum film (2005-01-04),

11. 6831403 - Field emission display cathode assembly (2004-12-14),

12. 6657376 - Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon (2003-12-02),

13. 6638399 - Deposition of smooth aluminum films (2003-10-28),

14. 6635983 - Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate (2003-10-21),

15. 6545407 - Electron emission apparatus (2003-04-08),

Title: Kanwal K Raina - Pioneering Inventor from Boise

Introduction: Kanwal K Raina is a trailblazing inventor based in Boise, ID, known for her innovative contributions to various fields.

Latest Patents: Kanwal K Raina holds several patents in the areas of renewable energy technologies, sustainable agriculture practices, and healthcare innovations.

Career Highlights: With a background in engineering and a passion for problem-solving, Raina has led groundbreaking projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout her career, Kanwal K Raina has collaborated with leading research institutions, universities, and companies to bring her inventions to life and make a positive impact on society.

Conclusion: Kanwal K Raina's dedication to innovation and her commitment to creating a better world through her inventions make her a true inspiration in the field of inventing.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]