The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
Dec. 20, 2002
Applicant:
Inventors:
Behnam Moradi, Boise, ID (US);
Kanwal K. Raina, Boise, ID (US);
Michael J. Westphal, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 ;
U.S. Cl.
CPC ...
H01J 1/62 ;
Abstract
Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.