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For the Inventor, By the Inventor

Kyungki-do, South Korea

Kang-Deog Suh

This inventor holds 14 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1994-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kang-Deog Suh. Retrieved from https://idiyas.com/inventor/kang-deog-suh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 9

Forward Citations = 299(Granted Patents)


Location History:

  • Ahnyang-city, KR (1995)
  • Ahnyang, KR (1995)
  • Kyunggi-do, KR (1999 - 2006)
  • Kyungki-do, KR (1994 - 2011)

Company Filing History:

goldMedal14 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1994-2011

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14 patents (USPTO):Explore Patents
1. 8045385 - Methods of operating nonvolatile memory devices to inhibit parasitic charge accumulation therein (2011-10-25),
2. 7864582 - Nonvolatile memory devices and methods of operating same to inhibit parasitic charge accumulation therein (2011-01-04),
3. 7099196 - Flash memory device and program verification method thereof (2006-08-29),
4. 6965964 - Nand flash memory device (2005-11-15),
5. 5986947 - Charge pump circuits having floating wells (1999-11-16),
6. 5909405 - Nonvolatile semiconductor memory (1999-06-01),
7. 5790458 - Sense amplifier for nonvolatile semiconductor memory device (1998-08-04),
8. 5768188 - Multi-state non-volatile semiconductor memory and method for driving the (1998-06-16),
9. 5661682 - Nonvolatile semiconductor memory device (1997-08-26),
10. 5617353 - Nonvolatile semiconductor memory device (1997-04-01),
11. 5568420 - Nonvolatile semiconductor memory device (1996-10-22),
12. 5472892 - Method of making a non-volatile floating gate memory device with (1995-12-05),
13. 5434814 - Circuit for repairing defective read only memories with redundant NAND (1995-07-18),
14. 5299166 - Device for preventing excess erasing of a NAND-type flash memory and (1994-03-29),

Title: Innovations of Kang-Deog Suh in Nonvolatile Memory Technology

Introduction

Kang-Deog Suh is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 14 patents. His work focuses on innovative methods to enhance the performance and reliability of memory technology.

Latest Patents

One of Kang-Deog Suh's latest patents involves methods of operating nonvolatile memory devices to inhibit parasitic charge accumulation. This patent describes operations to erase a first string of nonvolatile memory cells by selectively erasing even-numbered cells followed by odd-numbered cells. The process ensures that while one set of cells is being erased, the other set is biased in a blocking condition to prevent unintended erasure. Another notable patent outlines similar methods for charge trap nonvolatile memory devices, emphasizing the importance of selective erasure to maintain data integrity.

Career Highlights

Kang-Deog Suh is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His expertise in nonvolatile memory devices has positioned him as a key figure in the industry, contributing to advancements that benefit a wide range of applications.

Collaborations

Throughout his career, Kang-Deog Suh has collaborated with notable colleagues, including Young-Ho Lim and Hyong-Gon Lee. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Kang-Deog Suh's contributions to nonvolatile memory technology exemplify the impact of innovative thinking in the field of electronics. His patents not only advance the technology but also pave the way for future developments in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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