Yokohama, Japan

Kaname Ebihara


Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Kanagawa, JP (2013)
  • Yokohama, JP (2013 - 2023)

Company Filing History:


Years Active: 2013-2023

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3 patents (USPTO):Explore Patents

Title: Kaname Ebihara: Innovator in Semiconductor Technology

Introduction

Kaname Ebihara is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative semiconductor device packages and amplifiers, showcasing his expertise in this critical area of electronics.

Latest Patents

Ebihara's latest patents include a semiconductor device package and a Doherty amplifier. The semiconductor device package features a base made of metal, a dielectric side wall, and a joining material containing silver. This design enhances the electrical connection and efficiency of semiconductor devices. The Doherty amplifier patent describes a carrier amplifier with a first FET and a peaking amplifier with a second FET, optimizing performance through a unique gate electrode configuration.

Career Highlights

Kaname Ebihara is currently employed at Sumitomo Electric Device Innovations, Inc., where he continues to push the boundaries of semiconductor technology. His innovative designs have contributed to advancements in electronic devices, making them more efficient and reliable.

Collaborations

Ebihara has collaborated with notable colleagues such as Hiroaki Deguchi and Shingo Inoue. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Kaname Ebihara's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the development of advanced electronic devices, ensuring a lasting impact on the industry.

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