Sumitomo Electric Device Innovations, Inc.

Kaname Ebihara

Hiroaki Deguchi

Shingo Inoue

A semiconductor device package is disclosed. The package according to one example includes a base having a main surface made of a metal, a dielectric side wall having a bottom surface facing the main surface, a joining material containing silver (Ag) and joining the main surface of the base and the bottom surface of the side wall to each other, a lead made of a metal joined to an upper surface of the side wall on a side opposite to the bottom surface, and a conductive layer not containing silver (Ag). The conductive layer is provided between the bottom surface and the upper surface of the side wall at a position overlapping the lead when viewed from a normal direction of the main surface. The conductive layer is electrically connected to the joining material, extends along the bottom surface, and is exposed from a lateral surface of the side wall.

Semiconductor device package and semiconductor device

A Doherty amplifier includes a carrier amplifier including a first FET, the first FET having a plurality of gate electrodes, and a peaking amplifier including a second FET, the second FET having a plurality of gate electrodes, a gate-to-gate interval of the gate electrodes of the second FET being shorter than a gate-to-gate interval of the first FET.

Growing community of inventors

Yokohama, Japan

Kaname Ebihara