This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2015
Title: Kan Hwa Chang: Innovator in Carbon Ion Technology
Introduction
Kan Hwa Chang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of ion implantation technology, particularly through his innovative work on carbon ion sources. His expertise and inventions have implications for various applications in semiconductor manufacturing and materials science.
Latest Patents
Kan Hwa Chang holds a patent for "Methods and apparatus for a carbon ion source head." This invention involves an ionization chamber designed to receive a process gas containing carbon and a noble carrier gas. The cathode within the ionization chamber emits electrons through thermionic emission, and a graphite coating is applied to at least a portion of the cathode. The outlet of the ionization chamber is configured to output carbon ions, and the patent also discloses a method for ion implantation of carbon, along with additional alternative embodiments. He has 1 patent to his name.
Career Highlights
Kan Hwa Chang is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work at this company has allowed him to contribute to advancements in technology that are crucial for modern electronics.
Collaborations
Throughout his career, Kan Hwa Chang has collaborated with talented individuals such as Ming-Te Chen and Yi-Jiun Lee. These collaborations have fostered innovation and have been instrumental in the development of new technologies in the field.
Conclusion
Kan Hwa Chang's contributions to carbon ion technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and collaborative efforts highlight the importance of research and development in advancing technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile