The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Mar. 08, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yi-Jiun Lee, Hsin-Chu, TW;

Cheng-Hung Hu, Hsin-Chu, TW;

Yh-Hsiu Hsiao, Zhunan Township, TW;

Kan Hwa Chang, Hsin-Chu, TW;

Ming-Te Chen, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01L 21/265 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H01L 21/26506 (2013.01); H01J 37/3171 (2013.01);
Abstract

Methods and apparatus for a carbon ion source head. An ionization chamber is configured to receive a process gas containing carbon and a noble carrier gas; a cathode is disposed in the ionization chamber and configured to emit electrons in thermionic emission; a graphite coating is provided on at least a portion of the cathode; and an outlet on the ionization chamber is configured to output carbon ions. A method for ion implantation of carbon is disclosed. Additional alternative embodiments are disclosed.


Find Patent Forward Citations

Loading…