Zhubei, Taiwan

Kai-Wei Lo

This inventor holds 1 USPTO granted patent. Top assignee: Tclad Technology Corporation. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kai-Wei Lo. Retrieved from https://idiyas.com/inventor/kai-wei-lo-0o3hyifi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Kai-Wei Lo and Insulated Metal Substrate Innovation.

Introduction

Kai-Wei Lo is an inventor based in Zhubei, Taiwan. His patent work includes an insulated metal substrate design and a method for manufacturing it. He is associated with Tclad Technology Corporation.

Latest Patents

Lo is credited with 1 patent: “Insulated Metal Substrate and Method for Manufacturing Same.” The invention describes an insulated metal substrate with an electrically conductive line pattern layer and an encapsulation layer that fills the gaps between conductive lines. The encapsulation layer’s upper surface is flush with the upper surface of the conductive line pattern layer.

The design also includes first and second adhesive layers between the conductive line pattern layer and a heat sink element. The patent specifies a bonding strength greater than 80 kg/cm between the two adhesive layers.

Career Highlights

Lo’s listed patent focuses on the construction and manufacture of insulated metal substrates, which combine electrical insulation with heat dissipation. His work is associated with Tclad Technology Corporation.

Collaborations

Feng-Chun Yu and Wen Feng Lee are identified as Lo’s coworkers.

Conclusion

Kai-Wei Lo’s patent describes an insulated metal substrate designed to integrate conductive circuitry, layered adhesives, and a heat sink, with a specified bonding-strength requirement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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