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For the Inventor, By the Inventor

Kanagawa-ken, Japan

Junichiro Noda

USPTO Granted Patents = 13

Average Co-Inventor Count = 1.7

ph-index = 8

Forward Citations = 262(Granted Patents)


Location History:

  • Tokyo, JP (1997 - 1998)
  • Yokohama, JP (2002 - 2006)
  • Kanagawa-ken, JP (2002 - 2008)

Company Filing History:

goldMedal13 out of 52,752 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1997-2008

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13 patents (USPTO):Explore Patents
1. 7365555 - Semiconductor device, method for testing the same and IC card (2008-04-29),
2. 7123501 - Semiconductor memory device using ferroelectric capacitor, and semiconductor device with the same (2006-10-17),
3. 7098681 - Semiconductor device, method for testing the same and IC card (2006-08-29),
4. 6999353 - Semiconductor memory device including page latch circuit (2006-02-14),
5. 6845047 - Read circuit of nonvolatile semiconductor memory (2005-01-18),
6. 6826116 - Semiconductor memory device including page latch circuit (2004-11-30),
7. 6731538 - Semiconductor memory device including page latch circuit (2004-05-04),
8. 6674668 - Read circuit on nonvolatile semiconductor memory (2004-01-06),
9. 6438038 - Read circuit of nonvolatile semiconductor memory (2002-08-20),
10. 6400604 - Nonvolatile semiconductor memory device having a data reprogram mode (2002-06-04),
11. 5844268 - Nonvolatile semiconductor memory device (1998-12-01),
12. 5702966 - Method of manufacturing a semiconductor memory device (1997-12-30),
13. 5596529 - Nonvolatile semiconductor memory device (1997-01-21),

Title: **The Innovative Contributions of Junichiro Noda**

Introduction

Junichiro Noda, an accomplished inventor based in Kanagawa-ken, Japan, has made significant strides in the field of semiconductor technology. With a commendable portfolio of 13 patents, Noda stands out as a key contributor to advancements in electronic devices and memory solutions.

Latest Patents

Among his latest inventions, Noda's patents include a groundbreaking semiconductor device designed with a boosting circuit that generates an elevated potential to an output line. This design features an internal circuit that is supplied with the boosting potential, enhancing performance during operational states. Additionally, the device includes a test line connected to the output line, controlled by a circuit that ensures current is regulated efficiently during boosting operations.

Furthermore, Noda has developed a semiconductor memory device utilizing a ferroelectric capacitor. This innovative device comprises a memory cell section that incorporates at least one cell transistor for data storage. In addition to this, it includes a sense amplifier linked through a bit line, accompanied by an error checking and correction circuit that ensures accuracy in data retrieval.

Career Highlights

Junichiro Noda has dedicated his career to advancing semiconductor technology, primarily working with Kabushiki Kaisha Toshiba. His contributions have played a pivotal role in enhancing the performance and reliability of modern electronic devices.

Collaborations

Throughout his tenure at Toshiba, Noda has collaborated with talented colleagues, including Tamio Ikehashi and Kenichi Imamiya. Together, they have fostered an innovative environment that promotes the development of cutting-edge technologies.

Conclusion

Junichiro Noda's impressive portfolio and collaborative spirit exemplify the essence of innovation in the semiconductor field. His contributions continue to drive advancements that shape the future of technology, solidifying his reputation as an influential inventor in Japan and beyond.

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