The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Sep. 22, 2003
Tamio Ikehashi, Kamakura, JP;
Kenichi Imamiya, Tokyo, JP;
Junichiro Noda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An INVSRC node and a SAREF node are previously precharged. After a potential on a bit line is reset, the bit line (BLS node) is precharged. In this event, a clamp MOS transistor in a sense amplifier is in ON state, and an SA node is also precharged simultaneously. A precharge level is set to a value lower than a threshold voltage of an inverter. Subsequently, when SAEN transitions to 'H,' a sense operation is performed. For reading data '0,' the SA node is rapidly increased to Vdd. For reading data “1,” the SA node slowly approaches to Vss. A change in the potential at the SA node is detected by the inverter.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile