Suwon, South Korea

Junghyun Kim

This inventor holds 5 USPTO granted patents and 5 published patent applications and 1 EPO patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junghyun Kim. Retrieved from https://idiyas.com/inventor/junghyun-kim-sd4fsoq7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.8

ph-index = 1


Company Filing History:


Years Active: 2026

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5 patents (USPTO):Explore Patents

Title: Junghyun Kim and Image Sensor Innovation.

Introduction

Junghyun Kim is an inventor based in Suwon, South Korea, and works at Samsung Electronics Ltd. His patent work focuses on image sensor structures and manufacturing methods. He is associated with 5 patents.

Latest Patents

Two of Kim’s latest patents concern image sensors. “Image Sensor and Method of Manufacturing the Same” describes a process for building a sensor with stacked chip structures and patterned lens regions. The method includes forming isolation and internal grooves in a lens material layer before shaping the lens patterns.

“Image Sensor” describes four unit pixels arranged as a shared 2×2 pixel group and separated by a deep trench isolation structure. The design includes inner and outer isolation structures, with a DTI Center Cut region between portions of the inner structure.

Career Highlights

Kim’s listed patent portfolio reflects work on both image sensor fabrication and pixel isolation. These inventions address lens formation and the structural separation of pixels within a shared sensor arrangement.

Collaborations

Kim’s listed coworkers include Jonghoon Park and Yunki Lee. His work is associated with Samsung Electronics Ltd.

Conclusion

Junghyun Kim’s patents highlight contributions to image sensor manufacturing and pixel architecture through lens-patterning methods and deep trench isolation designs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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