The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Dec. 01, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junghyun Kim, Suwon-si, KR;

Jonghoon Park, Suwon-si, KR;

Yunki Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8057 (2025.01); H10F 39/182 (2025.01);
Abstract

An image sensor may include four unit pixels constituting a shared pixel in a 2*2 structure; and a Deep Trench Isolation (DTI) structure isolating the four unit pixels from each other. The DTI structure may include an inner DTI structure inside the shared pixel and an outer DTI structure surrounding the shared pixel. The inner DTI structure may include a first DTI structure passing through a center of the shared pixel and extending in a first direction or a second direction and a second DTI structure extending toward the center of the shared pixel in a direction perpendicular to a direction in which the first DTI structure extends. The shared pixel may include a DTI Center Cut (DCC) region between the first DTI structure and the second DTI structure in a direction in which the second DTI structure extends.


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