Hsinchu, Taiwan

June-Min Yao


Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1999-2004

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3 patents (USPTO):Explore Patents

Title: June-Min Yao: Innovator in Semiconductor Technology

Introduction

June-Min Yao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative processes that enhance the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is a re-oxidation process of a semiconductor device. This patent describes a method involving a substrate with a stacked structure that includes a polysilicon/tungsten silicide interface. A thin chemical vapor deposition (CVD) oxide layer is formed on the substrate, followed by an oxidation process to create a thermal oxide layer.

Another notable patent is related to the method of forming multiple oxide layers with different thicknesses in a linear nitrogen doping process. This process involves creating a sacrificial oxide layer on a silicon surface, followed by the formation of openings in a mask layer. Nitrogen ions are implanted into different regions of the substrate, leading to the formation of silicon oxide layers with varying thicknesses.

Career Highlights

June-Min Yao has worked with several esteemed organizations, including Macronix International Co., Ltd. and the Industrial Technology Research Institute. His experience in these companies has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

He has collaborated with notable colleagues such as Jui-Neng Tu and Chung-Min Liu, contributing to advancements in semiconductor technology through teamwork and shared expertise.

Conclusion

June-Min Yao's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative processes continue to shape the future of semiconductor devices.

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