The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Nov. 29, 2002
Applicant:
Inventors:
Jui-Neng Tu, Hsinchu, TW;
June-Min Yao, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A re-oxidation process of a semiconductor device is described. A substrate having a stacked structure thereon is provided, wherein the stacked structure includes a polysilicon/tungsten silicide interface. A thin CVD oxide layer is formed on the substrate and the stacked structure with a chemical vapor deposition (CVD) process. Then, an oxidation process is performed to form a thermal oxide layer on the substrate and the stacked structure.