Jeollabuk-do, South Korea

Jun-Won Lee

This inventor holds 1 USPTO granted patent. Top assignee: Hansol Chemical Co., Ltd.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun-Won Lee. Retrieved from https://idiyas.com/inventor/jun-won-lee-poqlvcrr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Innovations of Jun-Won Lee in Atomic Layer Deposition

Introduction

Jun-Won Lee is a notable inventor based in Jeollabuk-do, South Korea. He has made significant contributions to the field of thin film deposition technologies. His work primarily focuses on precursor compounds used in atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Latest Patents

Jun-Won Lee holds 1 patent related to precursor compounds for ALD and CVD processes. His patent, titled "Precursor compounds for atomic layer deposition (ALD) and chemical vapor deposition (CVD) and ALD/CVD process using the same," addresses nonpyrophoric precursor compounds suitable for thin film deposition. This invention enhances the efficiency and safety of the deposition processes.

Career Highlights

Jun-Won Lee is currently employed at Hansol Chemical Co., Ltd., where he continues to innovate in the field of chemical engineering. His expertise in precursor compounds has positioned him as a valuable asset to his company and the industry.

Collaborations

He has collaborated with notable colleagues, including Ki-Yeung Mun and Jung-Wun Hwang, to advance research and development in thin film technologies.

Conclusion

Jun-Won Lee's contributions to the field of atomic layer deposition through his innovative patents and collaborations highlight his importance as an inventor. His work continues to influence advancements in thin film deposition technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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