Jun Song

This inventor holds 20 USPTO granted patents, primarily in ESD Protection Technologies. Top assignee: Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 2001-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Song. Retrieved from https://idiyas.com/inventor/jun-song-lgqwoowv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 20

% Patents Active = 90.0

Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 180(Granted Patents)

Company Filing History:

20 out of 962

Chartered Semiconductor Manufacturing Ltd (Corporation)

patents

Years Active: 2001-2005

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Areas of Expertise:

ESD Protection

SOI MOSFET

High K Dielectric Layer

PID Protection Diode

Thyristor Structure

Source-Drain Extension

Rim Phase Shift Mask

Wedge Isolation Transistors

Hard Mask Patterning

Transient Trigger Network

Thick Oxide MOS Device

STI Deep Submicron Technology

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6963113 - Method of body contact for SOI MOSFET (2005-11-08),

2. 6855609 - Method of manufacturing ESD protection structure (2005-02-15),

3. 6835985 - ESD protection structure (2004-12-28),

4. 6787422 - Method of body contact for SOI mosfet (2004-09-07),

5. 6764914 - Method of forming a high K metallic dielectric layer (2004-07-20),

6. 6611024 - Method of forming PID protection diode for SOI wafer (2003-08-26),

7. 6582856 - Simplified method of fabricating a rim phase shift mask (2003-06-24),

8. 6555878 - Umos-like gate-controlled thyristor structure for ESD protection (2003-04-29),

9. 6492242 - Method of forming of high K metallic dielectric layer (2002-12-10),

10. 6458632 - UMOS-like gate-controlled thyristor structure for ESD protection (2002-10-01),

11. 6455384 - Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacers (2002-09-24),

12. 6399431 - ESD protection device for SOI technology (2002-06-04),

13. 6376379 - Method of hard mask patterning (2002-04-23),

14. 6376319 - Process to fabricate a source-drain extension (2002-04-23),

15. 6329253 - Thick oxide MOS device used in ESD protection circuit (2001-12-11),

Title: Innovations by Jun Song: A Leader in Semiconductor Patents

Introduction

Jun Song is a prominent inventor based in Singapore, holding a significant portfolio of 20 patents in the semiconductor field. His innovative work primarily focuses on enhancing integrated circuit performance and reliability through advanced techniques in silicon-on-insulator (SOI) technology and electrostatic discharge (ESD) protection structures.

Latest Patents

Among Jun Song's latest patents is the "Method of body contact for SOI MOSFET," which describes an innovative technique for forming a silicon-on-insulator MOSFET that eliminates floating body effects. This technology includes the creation of a silicon-on-insulator substrate where a silicon semiconductor substrate is positioned beneath an oxide layer and a silicon layer. The method involves etching trenches that isolate active areas of the semiconductor substrate and forming gate electrodes with associated source and drain regions.

Another significant patent is the "Method of manufacturing ESD protection structure," which details the manufacturing process for a transistor structure designed to improve ESD protection in integrated circuits. This method includes the formation of shallow trench isolation to separate source and drain diffusion regions, along with ion implantation techniques that control the device trigger voltage, significantly enhancing ESD performance.

Career Highlights

Jun Song's career is marked by his contributions to Chartered Semiconductor Manufacturing Ltd, where he has focused on groundbreaking semiconductor technologies. His extensive patent portfolio showcases his dedication to pushing the boundaries of current methods and enhancing device functionality and performance.

Collaborations

Throughout his career, Jun Song has collaborated with talented coworkers such as Ting Cheong Ang and Shyue Fong Quek. These partnerships have greatly contributed to the advancements in semiconductor technologies and reinforced the innovative environment at Chartered Semiconductor Manufacturing Ltd.

Conclusion

Jun Song's work exemplifies the continuous efforts in the field of semiconductor innovation. His patents are instrumental in advancing the technology landscape, addressing challenges associated with device performance and reliability. As he continues to innovate, Jun Song remains a key figure in the semiconductor industry, paving the way for future breakthroughs.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]