IDiyas

For the Inventor, By the Inventor

Singapore, Singapore

Jun Song

USPTO Granted Patents = 20

Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 179(Granted Patents)


Company Filing History:

goldMedal20 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents

Years Active: 2001-2005

where 'Filed Patents' based on already Granted Patents

20 patents (USPTO):
1. 6963113 - Method of body contact for SOI MOSFET (2005-11-08),
2. 6855609 - Method of manufacturing ESD protection structure (2005-02-15),
3. 6835985 - ESD protection structure (2004-12-28),
4. 6787422 - Method of body contact for SOI mosfet (2004-09-07),
5. 6764914 - Method of forming a high K metallic dielectric layer (2004-07-20),
6. 6611024 - Method of forming PID protection diode for SOI wafer (2003-08-26),
7. 6582856 - Simplified method of fabricating a rim phase shift mask (2003-06-24),
8. 6555878 - Umos-like gate-controlled thyristor structure for ESD protection (2003-04-29),
9. 6492242 - Method of forming of high K metallic dielectric layer (2002-12-10),
10. 6458632 - UMOS-like gate-controlled thyristor structure for ESD protection (2002-10-01),
11. 6455384 - Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacers (2002-09-24),
12. 6399431 - ESD protection device for SOI technology (2002-06-04),
13. 6376379 - Method of hard mask patterning (2002-04-23),
14. 6376319 - Process to fabricate a source-drain extension (2002-04-23),
15. 6329253 - Thick oxide MOS device used in ESD protection circuit (2001-12-11),

Title: Innovations by Jun Song: A Leader in Semiconductor Patents

Introduction

Jun Song is a prominent inventor based in Singapore, holding a significant portfolio of 20 patents in the semiconductor field. His innovative work primarily focuses on enhancing integrated circuit performance and reliability through advanced techniques in silicon-on-insulator (SOI) technology and electrostatic discharge (ESD) protection structures.

Latest Patents

Among Jun Song's latest patents is the "Method of body contact for SOI MOSFET," which describes an innovative technique for forming a silicon-on-insulator MOSFET that eliminates floating body effects. This technology includes the creation of a silicon-on-insulator substrate where a silicon semiconductor substrate is positioned beneath an oxide layer and a silicon layer. The method involves etching trenches that isolate active areas of the semiconductor substrate and forming gate electrodes with associated source and drain regions.

Another significant patent is the "Method of manufacturing ESD protection structure," which details the manufacturing process for a transistor structure designed to improve ESD protection in integrated circuits. This method includes the formation of shallow trench isolation to separate source and drain diffusion regions, along with ion implantation techniques that control the device trigger voltage, significantly enhancing ESD performance.

Career Highlights

Jun Song's career is marked by his contributions to Chartered Semiconductor Manufacturing Ltd, where he has focused on groundbreaking semiconductor technologies. His extensive patent portfolio showcases his dedication to pushing the boundaries of current methods and enhancing device functionality and performance.

Collaborations

Throughout his career, Jun Song has collaborated with talented coworkers such as Ting Cheong Ang and Shyue Fong Quek. These partnerships have greatly contributed to the advancements in semiconductor technologies and reinforced the innovative environment at Chartered Semiconductor Manufacturing Ltd.

Conclusion

Jun Song's work exemplifies the continuous efforts in the field of semiconductor innovation. His patents are instrumental in advancing the technology landscape, addressing challenges associated with device performance and reliability. As he continues to innovate, Jun Song remains a key figure in the semiconductor industry, paving the way for future breakthroughs.

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