The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Feb. 01, 2000
Applicant:
Inventors:
Shyue Fong Quek, Petaling Jaya, MY;
Ting Cheong Ang, Singapore, SG;
Jun Song, Singapore, SG;
Sang Yee Loong, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of patterning a hard mask, the comprising the following steps. A semiconductor structure is provided. A conductor film is formed over the semiconductor structure. An oxide layer is formed over the conductor film. A patterned metal oxide layer is formed over the conductor film. The oxide layer and the conductor film are etched, using the metal oxide layer as a hard mask, to form a patterned structure.
Quick Actions:
Quek, Shyue. (2002). Method of hard mask patterning (U.S. Patent No. 6376379). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6376379
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile