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For the Inventor, By the Inventor

Hsinchu, Taiwan

Jun-Lin Tsai

This inventor holds 14 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2000-2008.

USPTO Granted Patents = 14

% Patents Active = 85.7

Average Co-Inventor Count = 3.7

ph-index = 5

Forward Citations = 79(Granted Patents)


Company Filing History:

goldMedal14 out of 42,759 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2000-2008

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14 patents (USPTO):Explore Patents
1. 7372102 - Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology (2008-05-13),
2. 7250344 - Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology (2007-07-31),
3. 7015086 - Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology (2006-03-21),
4. 6747336 - Twin current bipolar device with hi-lo base profile (2004-06-08),
5. 6569730 - High voltage transistor using P+ buried layer (2003-05-27),
6. 6423590 - High voltage transistor using P+ buried layer (2002-07-23),
7. 6396126 - High voltage transistor using P+ buried layer (2002-05-28),
8. 6340833 - Integrated circuit polysilicon resistor having a silicide extension to achieve 100 % metal shielding from hydrogen intrusion (2002-01-22),
9. 6245609 - High voltage transistor using P+ buried layer (2001-06-12),
10. 6242313 - Use of polysilicon field plates to improve high voltage bipolar device breakdown voltage (2001-06-05),
11. 6211028 - Twin current bipolar device with hi-lo base profile (2001-04-03),
12. 6165861 - Integrated circuit polysilicon resistor having a silicide extension to (2000-12-26),
13. 6162695 - Field ring to improve the breakdown voltage for a high voltage bipolar (2000-12-19),
14. 6096629 - Uniform sidewall profile etch method for forming low contact leakage (2000-08-01),

Title: The Innovative Contributions of Jun-Lin Tsai

Introduction

Jun-Lin Tsai, an accomplished inventor based in Hsin-Chu, Taiwan, has significantly impacted the field of semiconductor technology. With a remarkable portfolio of 14 patents, his work is characterized by innovative solutions that enhance the functionality and efficiency of semiconductor devices.

Latest Patents

Among his latest contributions are two notable patents focused on the shallow trench-deep trench isolation regions specifically for BiCMOS/CMOS technology. The first patent details a structure having a shallow trench-deep trench isolation region, providing enhanced performance for semiconductor devices. The second patent outlines a method for forming this isolation region, ensuring that the technology maintains its high standards for performance and reliability.

Career Highlights

Jun-Lin Tsai works at Taiwan Semiconductor Manufacturing Company Limited, a leader in semiconductor manufacturing. His expertise and innovations have played a pivotal role in advancing the technology that drives modern electronics, contributing to the company's prestigious reputation in the industry.

Collaborations

Throughout his career, Jun-Lin has collaborated with talented colleagues, including Ruey-Hsin Liu and Jei-Feng Hwang. Their collective efforts have fostered an environment of innovation, allowing them to push the boundaries of what is possible in semiconductor technology.

Conclusion

Jun-Lin Tsai's dedication to innovation and invention in the semiconductor field is evident through his extensive patent portfolio. As he continues to work with influential companies and talented individuals, his contributions are sure to inspire future advancements in semiconductor technology.

Profile summary based on public USPTO records.
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