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For the Inventor, By the Inventor

Annaka, Japan

Jun Ikeda

This inventor holds 5 USPTO granted patents and 1 published patent application. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 1994-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Ikeda. Retrieved from https://idiyas.com/inventor/jun-ikeda-7rquvflk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 80.0

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 13(Granted Patents)


Location History:

  • Iwaki, JP (1994)
  • Annaka, JP (2009 - 2011)
  • Gunma, JP (2011)

Company Filing History:

goldMedal5 out of 1,099 
 
Shin-Etsu Handotai Co., Ltd.
 patents

Years Active: 1994-2011

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5 patents (USPTO):Explore Patents
1. 8008671 - Light-emitting device and method for fabricating the same (2011-08-30),
2. 8003421 - Method for manufacturing compound semiconductor substrate, compound semiconductor substrate and light emitting device (2011-08-23),
3. 7960745 - Light emitting device and method of fabricating the same (2011-06-14),
4. 7511314 - Light emitting device and method of fabricating the same (2009-03-31),
5. 5302839 - Light emitting diode having an improved GaP compound substrate for an (1994-04-12),

Title: Jun Ikeda: Innovator in Light-Emitting Devices

Introduction

Jun Ikeda is a prominent inventor based in Annaka, Japan, known for his contributions to the field of light-emitting devices. With a total of 5 patents to his name, Ikeda has made significant advancements in semiconductor technology.

Latest Patents

Ikeda's latest patents include a light-emitting device and a method for fabricating the same. This innovative device features a transparent conductive semiconductor substrate that is directly bonded to a main compound semiconductor layer composed of Group III-V compound semiconductor. The invention adjusts the alkali metal atom concentration at the bonded boundary surface to enhance the performance of the light-emitting device by reducing boundary surface resistance. Another notable patent involves a method for manufacturing a compound semiconductor substrate, which includes the epitaxial growth of a quaternary light-emitting layer and the vapor-phase growth of p-type and n-type GaP window layers.

Career Highlights

Ikeda is currently employed at Shin-Etsu Handotai Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing efficient light-emitting devices that have applications in various industries.

Collaborations

Ikeda collaborates with talented coworkers, including Yukari Suzuki and Tsuneyuki Kaise, who contribute to his innovative projects and research endeavors.

Conclusion

Jun Ikeda's work in light-emitting devices showcases his dedication to innovation and excellence in semiconductor technology. His patents reflect a commitment to advancing the field and improving device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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