The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Oct. 15, 2004
Masato Yamada, Annaka, JP;
Masayuki Shinohara, Annaka, JP;
Masanobu Takahashi, Annaka, JP;
Keizou Adomi, Annaka, JP;
Jun Ikeda, Annaka, JP;
Masato Yamada, Annaka, JP;
Masayuki Shinohara, Annaka, JP;
Masanobu Takahashi, Annaka, JP;
Keizou Adomi, Annaka, JP;
Jun Ikeda, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Toyko, JP;
Abstract
Disclosed is a light-emitting device () has a light-emitting layer portion () which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer () with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting layer portion () and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (). The transparent thick-film semiconductor layer () has a lateral surface portion (S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer () is not less than 5×10/cmand not more than 2×10/cm. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.