Company Filing History:
Years Active: 1989-1992
Title: Innovations of Jun-ichi Okano in Semiconductor Technology
Introduction
Jun-ichi Okano is a prominent inventor based in Hyogo, Japan, known for his significant contributions to semiconductor technology. With a total of 2 patents, Okano has developed innovative methods that enhance the manufacturing processes of semiconductor devices.
Latest Patents
One of Okano's latest patents is a method of rendering the impurity concentration of a semiconductor wafer. This invention provides a method for manufacturing semiconductor devices that includes ion-implanting various impurities into a wafer prior to a predetermined manufacturing process. The process improves the nonuniformity of impurity concentration, thereby enhancing the quality and yield of semiconductor devices. Another notable patent is the manufacturing method for cascaded junction field effect transistors. This method involves forming an epitaxial layer on a semiconductor substrate and performing selective oxidation to create a thick oxide film. The process allows for the formation of source and drain regions, as well as junction gates, which are crucial for the operation of the transistors.
Career Highlights
Jun-ichi Okano is associated with Kabushiki Kaisha Toshiba, where he has been instrumental in advancing semiconductor technologies. His work has significantly impacted the efficiency and effectiveness of semiconductor manufacturing processes.
Collaborations
Okano has collaborated with notable coworkers, including Kiyohito Matsumoto and Yoshikazu Usuki, contributing to various projects that enhance semiconductor technology.
Conclusion
Jun-ichi Okano's innovative patents and contributions to semiconductor technology reflect his expertise and commitment to advancing the field. His work continues to influence the manufacturing processes of semiconductor devices, ensuring higher quality and improved yields.