The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1992
Filed:
Sep. 07, 1990
Yoshikazu Usuki, Himeji, JP;
Shigeo Yawata, Hyogo, JP;
Jun-ichi Okano, Hyogo, JP;
Shigeru Moriyama, Himeji, JP;
Shun-ichi Hiraki, Nagareyama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
According to this invention, there is provided to a method of manufacturing semiconductor devices including the steps of ion-implanting at least one impurity selected from As, P, Sb, Si, B, Ga, and Al in a wafer prior to a predetermined manufactural process of semiconductor devices in the semiconductor wafer grown by the Czochralski technique, and thereafter annealing the wafer at a temperature of at least 900.degree. C. Nonuniformity of an impurity concentration of the wafer can be improved. The difference in characteristics among the semiconductor devices manufactured in the wafer is decreased, a product yield can be increased, and the quality of the semiconductor devices can be improved.