Chigasaki, Japan

Yoshikazu Usuki

This inventor holds 3 USPTO granted patents. Top assignees: Kabushiki Kaisha Toshiba, Tokyo Shibaura Denki Kabushiki Kaisha. Active years: 1986-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikazu Usuki. Retrieved from https://idiyas.com/inventor/yoshikazu-usuki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Chigasaki, JP (1986 - 1987)
  • Himeji, JP (1992)

Company Filing History:


Years Active: 1986-1992

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3 patents (USPTO):Explore Patents

Title: **The Innovative Mind of Yoshikazu Usuki: A Pioneer in Semiconductor Technology**

Introduction

Yoshikazu Usuki, an esteemed inventor based in Chigasaki, Japan, has made significant contributions to the field of semiconductor technology. With a total of three patents to his name, Usuki's innovative methods and processes have greatly improved the manufacturing quality and efficiency of semiconductor devices.

Latest Patents

Among his recent accomplishments, Usuki developed a patent for a "Method of rendering the impurity concentration of a semiconductor wafer." This invention describes a comprehensive method for manufacturing semiconductor devices that involves ion-implanting various impurities such as Arsenic (As), Phosphorus (P), Antimony (Sb), Silicon (Si), Boron (B), Gallium (Ga), and Aluminum (Al) in a semiconductor wafer produced via the Czochralski technique. This method also includes annealing the wafer at temperatures exceeding 900°C, which effectively enhances the uniformity of impurity concentration, reduces variability in device characteristics, and ultimately boosts product yield and quality.

Another notable patent is focused on the "Process of producing a semiconductor device." This innovation entails the use of a protective film that offers a high blocking capacity against contaminating ions and shields against external electric fields. The protective film is primarily composed of amorphous or polycrystalline silicon carbide, containing at least one selected element from hydrogen, nitrogen, oxygen, or a halogen, which safeguards the semiconductor's integrity.

Career Highlights

Yoshikazu Usuki has an impressive career background, having worked for prominent companies in the industry, including Toshiba Corporation and Tokyo Shibaura Electric Co., Ltd. His experience in these high-profile organizations has surely influenced his innovative approach to semiconductor manufacturing.

Collaborations

Throughout his professional journey, Usuki collaborated with esteemed colleagues, notably Shun-ichi Hiraki and Shunichi Hiraki. These partnerships have fostered a productive environment that has nurtured inventive ideas and driven advancements in semiconductor technology.

Conclusion

Yoshikazu Usuki's work exemplifies the essence of innovation within the semiconductor industry. With his patented technologies and partnerships, he continues to play a vital role in enhancing the performance and quality of semiconductor devices, demonstrating the profound impact that inventors can have on technology and society at large.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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