This inventor holds 3 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1989-1991.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1989-1991
Title: Jun'ichi Kinoshita: Innovator in Semiconductor Technology
Introduction
Jun'ichi Kinoshita is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of integrated devices. With a total of 3 patents to his name, Kinoshita's work has had a notable impact on the industry.
Latest Patents
Kinoshita's latest patents include a method for making a field effect transistor integrated with a light-emitting device. This innovative design features a monolithic optoelectronic integrated circuit (OEIC) where the light-emitting device and the field effect transistor (FET) are seamlessly integrated. The light-emitting device consists of a first clad layer, an active layer, and a second clad layer stacked on a substrate. The FET includes a channel layer and source and drain layers with a high impurity concentration, also stacked on the substrate. The design incorporates etching mask layers on the source and drain layers, along with a gate electrode formed on the channel layer. Notably, the first clad layer of the light-emitting diode and the source and drain layers of the FET are made from the same semiconductor layer, showcasing Kinoshita's innovative approach to device integration.
Another significant patent involves a semiconductor light-emitting device and its manufacturing method. In this patent, an active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are created in the active layer, dividing it into a contract portion and side portions. A p-type InP cladding layer is then deposited over the entire surface, which is selectively etched to form a mesa portion that includes the central active portion while exposing the buffer layer. An insulating film is applied to the mesa portion and buffer layer, resulting in the successful manufacture of a semiconductor light-emitting device.
Career Highlights
Kinoshita is currently employed at Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to further his research and development in semiconductor technologies, contributing to the company's innovative projects.
Collaborations
Throughout his career, Kinoshita has collaborated with notable colleagues, including Motoyasu Morinaga and Yuzo Hirayama. These collaborations have fostered a
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
