The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 1990
Filed:
Jul. 20, 1989
Jun'ichi Kinoshita, Yokohama, JP;
Motoyasu Morinaga, Yokohama, JP;
Hideto Furuyama, Tokyo, JP;
Yuzo Hirayama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type InP cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile