Jun Ho Lee

Title: Jun Ho Lee: Memory Word Line Structure Inventor

Introduction

Jun Ho Lee is an inventor associated with Higashihiroshima, Japan, and Micron Technology Incorporated. His patent work addresses memory-device architecture, particularly the structure of word lines and their oxide films.

Latest Patents

Lee is associated with 1 patent: “Apparatus Including Memory Word Line Structure.” The disclosed apparatus includes a word line array with multiple word lines extending through a memory mat. Two adjacent word lines have a contact on the first word line that is separated from the second word line by a gap. The word lines have a first oxide film in the array’s center area within the memory mat and a thicker second oxide film in the edge area outside the memory mat. This arrangement describes a structural approach to word-line design in a memory device.

Career Highlights

Lee’s listed patent is associated with Micron Technology Incorporated, a company whose work includes memory technologies. The patent focuses on the physical configuration of word lines and oxide films across different areas of a memory array.

Collaborations

Byung Yoon Kim is identified as Lee’s coworker. The provided information does not specify their roles or describe a particular joint project.

Conclusion

Jun Ho Lee’s patent documents an approach to memory word-line structure that distinguishes oxide-film thickness between the center and edge areas of an array.