Jun-chang Park

Title: Jun-chang Park and His Work in Semiconductor Etching.

Introduction

Jun-chang Park is an inventor based in Pyeongtaek, South Korea. His patent work includes a method for etching that uses reactive plasma and fluorine-containing precursors.

Latest Patents

Park is associated with 1 patent, titled “Etching Method.” The invention generates reactive plasma containing hydrogen and nitrogen in a discharge tube with an inorganic-oxide inner surface. The plasma is supplied to a connected processing chamber, where it helps generate a precursor containing fluorine and hydrogen. That precursor is then supplied to the material being etched. The method also treats the discharge tube’s inner surface with hydrogen plasma followed by oxygen plasma.

Career Highlights

Park’s listed patent is focused on plasma-based etching processes and the treatment of equipment surfaces used in those processes. He is associated with ULVAC, Inc.

Collaborations

Youhei Ono is identified as Park’s coworker. The available information does not specify whether Ono collaborated with him on the patent.

Conclusion

Jun-chang Park’s patent describes a plasma-assisted etching method that combines precursor generation with sequential treatment of the discharge tube’s inner surface.