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For the Inventor, By the Inventor

Fremont, CA, United States of America

Juline Shoeb

This inventor holds 19 USPTO granted patents and 4 published patent applications, primarily in Plasma Processing. Top assignee: Lam Research Corporation. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Juline Shoeb. Retrieved from https://idiyas.com/inventor/juline-shoeb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 94.7

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 33(Granted Patents)


Company Filing History:

goldMedal19 out of 3,953 
 
Lam Research Corporation
 patents

Years Active: 2019-2026

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Areas of Expertise:
Plasma Density Control
Ion Energy Enhancement
Etching Techniques
RF Coils
Silicon Dioxide Removal
Parameter Pulsing
Deuterium Plasma
Surface Kinetic Model
Monoenergetic Ion Generation
Substrate Support
Multi-Level Pulsing
Low Angular Spread
19 patents (USPTO):Explore Patents
1. 12712159 - SYSTEMS FOR CONTROLLING PLASMA DENSITY DISTRIBUTION PROFILES INCLUDING MULTI-RF ZONED SUBSTRATE SUPPORTS (2026-08-18),
2. 12494345 - Pulsing RF coils of a plasma chamber in reverse synchronization (2025-12-09),
3. 12283461 - Systems and methods for achieving peak ion energy enhancement with a low angular spread (2025-04-21),
4. 12119232 - Etching isolation features and dense features within a substrate (2024-10-15),
5. 12068131 - Multi-level parameter and frequency pulsing with a low angular spread (2024-08-20),
6. 12057319 - Selective silicon dioxide removal using low pressure low bias deuterium plasma (2024-08-06),
7. 11915912 - Systems and methods for achieving peak ion energy enhancement with a low angular spread (2024-02-27),
8. 11569067 - Systems and methods for achieving peak ion energy enhancement with a low angular spread (2023-01-31),
9. 11462390 - Multi-level parameter and frequency pulsing with a low angular spread (2022-10-04),
10. 11398387 - Etching isolation features and dense features within a substrate (2022-07-26),
11. 11049693 - Systems and methods for achieving peak ion energy enhancement with a low angular spread (2021-06-29),
12. 11011351 - Monoenergetic ion generation for controlled etch (2021-05-18),
13. 10755896 - Multi-level pulsing of DC and RF signals (2020-08-25),
14. 10580618 - Multi-level pulsing of DC and RF signals (2020-03-03),
15. 10573494 - Multi-level parameter and frequency pulsing with a low angular spread (2020-02-25),

Title: The Inventive Mind of Juline Shoeb: Revolutionizing Ion Energy Enhancement

Introduction:

Juline Shoeb, a prolific inventor based in Fremont, CA, has made significant strides in the realm of ion energy enhancement. With a notable 13 patents to his name, his innovative work at Lam Research Corporation has been instrumental in pushing the boundaries of plasma chamber technology.

Latest Patents:

Shoeb's latest patents showcase his expertise in developing cutting-edge systems and methods for achieving peak ion energy enhancement with a low angular spread. By utilizing multiple radio frequency (RF) generators in unique states, he has successfully increased ion energy levels during substrate processing, leading to enhanced efficiency and productivity.

Career Highlights:

Over the course of his career, Juline Shoeb has carved a niche for himself as a visionary in the field of semiconductor manufacturing. His relentless pursuit of excellence has not only resulted in numerous patents but has also cemented his reputation as a trailblazer in ion energy optimization.

Collaborations:

In his quest for innovation, Shoeb has collaborated with esteemed colleagues such as Ying Wu and Alex Paterson. Together, they have synergized their talents to develop groundbreaking solutions that have reshaped the landscape of ion energy enhancement in the semiconductor industry.

Conclusion:

Juline Shoeb's remarkable contributions to the field of ion energy enhancement stand as a testament to his ingenuity and dedication. With a keen eye for detail and a passion for pushing boundaries, he continues to inspire and drive innovation in the ever-evolving world of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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