The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Jul. 13, 2018
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Juline Shoeb, Fremont, CA (US);
Alexander Miller Paterson, San Jose, CA (US);
Ying Wu, Livermore, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01J 37/32091 (2013.01); H01J 2237/334 (2013.01);
Abstract
Systems and methods for generating monoenergetic ions are described. A duty cycle of a high parameter level of a multistate parameter signal is maintained and a difference between the high parameter level and a low parameter level of the multistate parameter signal is maintained to generate monoenergetic ions. The monoenergetic ions are used to etch a top material layer of a substrate at a rate that is self-limiting without substantially etching a bottom material layer of the substrate.