Aix en Provence, France

Julien Amouroux

This inventor holds 2 USPTO granted patents and 5 published patent applications. Top assignees: Stmicroelectronics (Crolles 2) Sas, Stmicroelectronics (Rousset) Sas, Stmicroelectronics International N.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Julien Amouroux. Retrieved from https://idiyas.com/inventor/julien-amouroux

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Julien Amouroux: Semiconductor Device Innovation

Introduction

Julien Amouroux is an inventor associated with Aix-en-Provence, France. His patent work concerns semiconductor-device manufacturing and the formation of protective and dielectric layers.

Latest Patents

Amouroux is credited with 1 patent: “Semiconductor Device and Method of Forming the Same.” The patent describes depositing a protective layer over two conductive features, removing the portion of that layer between them, and then forming an intermetal dielectric layer in the space. This process addresses the arrangement of protective and insulating materials between conductive features in a semiconductor device.

Career Highlights

Amouroux is associated with STMicroelectronics International N.V. His listed patent reflects work in semiconductor fabrication and device structure.

Collaborations

Antonin Chollet is identified as Amouroux’s coworker. The available information does not specify whether Chollet collaborated on the patent.

Conclusion

Julien Amouroux’s recorded invention focuses on a semiconductor manufacturing method for forming protective and dielectric layers between conductive features.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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