Hsinchu, Taiwan

Jui-Tse Tsai

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jui-Tse Tsai. Retrieved from https://idiyas.com/inventor/jui-tse-tsai-3zeiepus

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jui-Tse Tsai: Innovator in Semiconductor Technology

Introduction

Jui-Tse Tsai is a prominent inventor based in Hsinchu, Taiwan. She has made significant contributions to the field of semiconductor technology. Her innovative approach has led to the development of a unique method that enhances the performance of semiconductor devices.

Latest Patents

Jui-Tse Tsai holds a patent for a method of fin selection for improved performance in semiconductor devices. This method involves receiving an integrated circuit (IC) design layout that includes a design boundary and a pair of design fin patterns with specific fin spacing and pitch. The process includes creating a mandrel mask pattern by determining its edge based on the design boundary, fin spacing, and fin pitch. Additionally, it involves fabricating a mandrel mask and a cut mask to protect areas of a semiconductor wafer corresponding to the design fin patterns. This innovative method is crucial for optimizing semiconductor device performance.

Career Highlights

Jui-Tse Tsai is currently associated with Taiwan Semiconductor Manufacturing Company Limited. Her work at this leading semiconductor manufacturer has allowed her to apply her expertise in developing advanced technologies that drive the industry forward.

Collaborations

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Conclusion

Jui-Tse Tsai's contributions to semiconductor technology exemplify her innovative spirit and dedication to enhancing device performance. Her patent reflects her expertise and commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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