Watchung, NJ, United States of America

Jueinai Raynien Kwo

This inventor holds 11 USPTO granted patents. Top assignees: Lucent Technologies Inc., Agere Systems Guardian Corp., Agere Systems Inc.. Active years: 1995-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jueinai Raynien Kwo. Retrieved from https://idiyas.com/inventor/jueinai-raynien-kwo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 7

Forward Citations = 174(Granted Patents)


Location History:

  • Somerset County, NJ (US) (1996)
  • Watchung, NJ (US) (1995 - 2002)

Company Filing History:


Years Active: 1995-2002

Loading Chart...
11 patents (USPTO):Explore Patents

Title: Jueinai Raynien Kwo: Innovator in Semiconductor Technology

Introduction

Jueinai Raynien Kwo is a prominent inventor based in Watchung, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His innovative work has paved the way for advancements in electro-optic devices and semiconductor structures.

Latest Patents

One of Kwo's latest patents is a method of making an article comprising an oxide layer on a GaAs-based semiconductor body. This novel method involves ion implantation after oxide formation, followed by slow heating and cooling. This process ensures that essentially no interfacial defects detectable by high-resolution transmission electron microscopy are formed. If the MOS structure is a MOS-FET, metal contacts are provided in a conventional manner. A post-metallization anneal can result in FETs that are substantially free of drain current/voltage hysteresis. MOS-FETs produced using this method can achieve high yield and significantly increased lifetime compared to some prior art GaAs-based MOS-FETs.

Another significant patent involves an electro-optic device that includes a buffer layer of transparent conductive material. This device comprises an electro-optic crystal substrate, an optical waveguide path adjacent to the substrate surface, and an electrode spaced from the surface by a buffer layer. The buffer layer, made of a transparent electronically conductive material, enhances the operating stability of the device. Preferred materials for the buffer layer include electronically conductive gallium-indium-oxide and electronically conductive zinc-indium-tin-oxide.

Career Highlights

Throughout his career, Jueinai Raynien Kwo has worked with notable companies such as Lucent Technologies Inc. and Agere Systems Guardian Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Kwo has collaborated with several talented individuals in his field, including Minghwei Hong and Joseph Petrus Mannaerts. These collaborations have further enriched his work and contributed to the advancements in semiconductor technologies.

Conclusion

Jueinai Raynien Kwo is a distinguished inventor whose work in semiconductor technology has led to significant innovations. His patents reflect a deep understanding of the complexities of semiconductor structures and electro-optic devices. Kwo's contributions continue to influence the field and inspire future advancements

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…